| PART |
Description |
Maker |
| UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| MRF377MRF377R3MRF377R5 |
470–860 MHz, 240 W, 32 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| PTB20237 |
150 Watts 470-860 MHz UHF TV Power Transistor
150 Watts, 470-860 MHz UHF TV Power Transistor
|
ERICSSON[Ericsson]
|
| TPV8100BD |
TPV8100B 470-860 MHz, 150 W, 28 V RF Power Transistor - Archived
|
Motorola
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| MAFRIN0370 |
Single Junction Gull Wing Circulator 860 MHz-960 MHz
|
MACOM[Tyco Electronics]
|
| MAFRIN0495 |
Single Junction Surface Mount Gull Wing Circulator 860 MHz-872 MHz
|
Tyco Electronics
|
| DB-55008L-960 |
860 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER ROHS COMPLIANT PACKAGE
|
ST Microelectronics
|
| BGD804 BGD804112 |
860 MHz, 20 dB gain power
|
NXP Semiconductors N.V.
Philips
|
| BGD902MI BGD902 |
CATV amplifier modules 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BGD902MI BGD902 BGD902_902MI_6 |
860 MHz, 18.5 dB gain power
From old datasheet system
|
Philips
|
